Photoelectrochemical water oxidation over TiO₂ nanotubes modified with MoS₂ and g-C₃N₄

• Phuong Hoang Nguyen,
• Thi Minh Cao,
• Tho Truong Nguyen,
• Hien Duy Tong and
• Viet Van Pham

Beilstein J. Nanotechnol. 2022, 13, 1541–1550, doi:10.3762/bjnano.13.127

• , the area of interface or the electrode, the applied and flat band potentials, the Boltzmann constant, and the temperature, respectively. The plot of 1/C2 vs V shows an intercept of the x-axis, which corresponds to the flat band potential (Efb), that is, the conduction band maximum (CBM) level of the

LED-light-activated photocatalytic performance of metal-free carbon-modified hexagonal boron nitride towards degradation of methylene blue and phenol

• Nirmalendu S. Mishra and
• Pichiah Saravanan

Beilstein J. Nanotechnol. 2022, 13, 1380–1392, doi:10.3762/bjnano.13.114

• , respectively. The MS plots for the studied materials is depicted in Figure 6b,c. The n-type nature of the materials was confirmed through the occurrence of a positive slope. Subsequently, the flat band potential (EFB) was determined by extrapolating the linear portion of the MS plot [33]. The EFB values for

BiOCl/TiO₂/diatomite composites with enhanced visible-light photocatalytic activity for the degradation of rhodamine B

• Minlin Ao,
• Kun Liu,
• Xuekun Tang,
• Zishun Li,
• Qian Peng and
• Jing Huang

Beilstein J. Nanotechnol. 2019, 10, 1412–1422, doi:10.3762/bjnano.10.139

• Figure 9. BiOCl and TiO2/diatomite are n-type semiconductors, and the flat-band potential (vs Ag/AgCl) is −0.75 V and −1.04 V, respectively. According to Equation 1, the flat-band potential relative to Ag/AgCl can be converted to the normal hydrogen electrode (NHE) potential: where E0Ag/AgCl = 0.197 V

• [46]. Generally, for n-type semiconductors, the flat-band potential is about 0.1 V smaller than the minimum of the conduction band (CB). Therefore, the positions of the CB for BiOCl and TiO2/diatomite are about −0.45 V and −0.74 V (vs NHE), respectively. According to Equation 2 and Eg of BiOCl and

Impact of the anodization time on the photocatalytic activity of TiO₂ nanotubes

• Jesús A. Díaz-Real,
• Geyla C. Dubed-Bandomo,
• Juan Galindo-de-la-Rosa,
• Luis G. Arriaga,
• Janet Ledesma-García and
• Nicolas Alonso-Vante

Beilstein J. Nanotechnol. 2018, 9, 2628–2643, doi:10.3762/bjnano.9.244

• fact that it practically merges at the flat-band potential, Efb, and allows us to roughly estimate the position of the conduction band in the electrochemical potential scale. From the LSV the Eonset of all samples seems to start as soon as the surface is irradiated. To discard an instrumental artifact

• the Mott–Schottky equation (Equation 2): where Csc is the capacitance of the space-charge region, ND is the density of dopant atoms (cm−3), Efb is the flat-band potential, q is the elementary charge (1.602 × 10−19 C), ε0 is the vacuum permittivity (8.85 × 10−14 F·cm−1), and ε (42, [70]) is the

Thickness-dependent photoelectrochemical properties of a semitransparent Co₃O₄ photocathode

• Malkeshkumar Patel and
• Joondong Kim

Beilstein J. Nanotechnol. 2018, 9, 2432–2442, doi:10.3762/bjnano.9.228

• Co3O4 samples. Mott–Schottky (MS) characteristics allow us to describe the type of conductivity, free carrier concentration, and flat-band potential (VFB) of the samples. Figure 5e shows the thickness-dependent MS characteristics (1/C2 as a function of V vs RHE) of the Co3O4 samples, obtained at an

• applied frequency of 5 kHz and under dark conditions. The negative slope in the MS characteristics indicates a p-type material, and the two distinct slopes correspond to two Eg values. The intersect of the 1/C2 values on the potential axis indicates the flat-band potential, for which band edges are flat

• flat band to depletion condition); (c) 1.4 to 0.8 V vs RHE (covering the onset potential, which is close to the flat band potential as well as OER). Surface morphology of the 170 nm thick Co3O4 film on FTO/glass showing (a) the pores with diameters of 14–20 nm and (b) Co3O4 nanocrystals with diameters

Localized photodeposition of catalysts using nanophotonic resonances in silicon photocathodes

• Evgenia Kontoleta,
• Sven H. C. Askes,
• Lai-Hung Lai and
• Erik C. Garnett

Beilstein J. Nanotechnol. 2018, 9, 2097–2105, doi:10.3762/bjnano.9.198

• to a more reducing potential of −0.8 V (vs Ag/AgCl) during deposition, to efficiently extract the photogenerated charges from the Si nanostructures into the electrolyte and enhance the kinetics of the reaction. The flat-band potential of TiO2 at pH 11 is above the conduction band edge of p-type

Semi-automatic spray pyrolysis deposition of thin, transparent, titania films as blocking layers for dye-sensitized and perovskite solar cells

• Hana Krýsová,
• Josef Krýsa and
• Ladislav Kavan

Beilstein J. Nanotechnol. 2018, 9, 1135–1145, doi:10.3762/bjnano.9.105

• quality of our layers was tested in the pH-independent aqueous model redox system K3[Fe(CN)6]/K4[Fe(CN)6] [3]. Nernstian pH-dependence is demonstrated by the flat-band potential, φFB, of a single-crystal anatase electrode (Equation 1) [17]: As compared to this TiO2 (anatase) flat-band potential, the redox

• electroreduction (at −0.2 V), is a sign of good coverage of the electroactive FTO by the TiO2 film, which has properties comparable to those of a perfect anatase single crystal. The latter has a flat band potential (φFB) (cf. Equation 1) at ≈−0.5 V at the given experimental conditions (as in Figure 8). Hence, no

Facile synthesis of ZnFe₂O₄ photocatalysts for decolourization of organic dyes under solar irradiation

• Arjun Behera,
• Debasmita Kandi,
• Sanjit Manohar Majhi,
• Satyabadi Martha and
• Kulamani Parida

Beilstein J. Nanotechnol. 2018, 9, 436–446, doi:10.3762/bjnano.9.42

• the band edge of the prepared materials. The Mott–Schottky graphs were plotted according to Equation 2: where C, Vfb, k, T, e, ND, ε, ε0 and A are capacitance of the sample, flat-band potential, Boltzmann constant, absolute temperature, electron charge, donor density, semiconductor dielectric constant

• , dielectric constant in vacuum and area, respectively. C−2 was plotted as a function of the applied potential, Vapp. The extrapolation of the graph leads to the intersection point at the Y-axis, which gives the flat-band potential of the sample [33]. Figure 8 shows the Mott–Schottky plot of ZFO-500. The

• material is an n-type semiconductor and the flat-band potential (Efb) was calculated to be −0.69 eV (vs Ag/AgCl) or −0.09 eV (vs RHE). From UV–vis DRS measurements, the band gap of was found to be 1.81 V. So, the valence band position of ZFO is calculated as +1.72 eV (vs RHE). By considering the calculated

Schottky junction/ohmic contact behavior of a nanoporous TiO₂ thin film photoanode in contact with redox electrolyte solutions

• Masao Kaneko,
• Hirohito Ueno and
• Junichi Nemoto

Beilstein J. Nanotechnol. 2011, 2, 127–134, doi:10.3762/bjnano.2.15

• [Fe(CN)6]4− around the redox potential of the iron complex. It was suggested that the iron complex forms a second Schottky junction for which the flat band potential (Efb) lies near the redox potential of the iron complex. Keywords: cyclic voltammogram of titanium dioxide photoanode; flat band

• Fermi level is called the flat band potential (Efb). When an n-SC (i.e., photoanode) and a cathode are soaked in an electrolyte solution where an electron donor is present, and the anodic potential is applied to the SC under irradiation, anodic photocurrents begin to be generated due to band bending

• permittivity (ε of TiO2 = 85.8 and 170, anisotropic), ε0 the vacuum permittivity (8.854 × 10−12 F·m−1), q the elementary electric charge (1.602 × 10−19 C), N the carrier density [m−3], E the applied potential [V], Efb the flat band potential [V], kB the Boltzman constant (1.380 × 10−23 J·K−1), and T the